K9K4G08U1M Datasheet, PDF(29/40 Page) Samsung semiconductor – 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory

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K9K4G08U1M Datasheet, PDF (29/40 Pages) Samsung semiconductor – 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory

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K9K4G08U1M

K9F2G08U0M K9F2G16U0M

BLOCK ERASE OPERATION

CLE

ALE

I/Ox

R/B

tWC

tWB

tBERS

60h Row Add1 Row Add2 Row Add3 D0h

Row Address

Auto Block Erase

Setup Command

Erase Command

Busy

Preliminary

FLASH MEMORY

70h

I/O 0

I/O0=0 Successful Erase

Read Status I/O0=1 Error in Erase

Command

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