K9K4G08U1M Datasheet, PDF (1/40 Pages) Samsung semiconductor – 256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory

K9K4G08U1M
K9F2G08U0M K9F2G16U0M
Preliminary
FLASH MEMORY
Document Title
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
Revision History
Revision No History
0.0
1. Initial issue
0.1
1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 35)
0.2
The min. Vcc value 1.8V devices is changed.
K9F2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Draft Date Remark
Sep. 19.2001 Advance
Nov. 22. 2002 Preliminary
Mar. 6.2003
Preliminary
0.3
Few current value is changed.
Before
Unit : us
K9F2GXXQ0M K9F2GXXU0M
Typ. Max. Typ.
Max.
ISB2
20
100
20
100
ILI
-
±20
-
±20
ILO
-
±20
-
±20
After
ISB2
ILI
ILO
K9F2GXXQ0M
Typ. Max.
10
50
-
±10
-
±10
K9F2GXXU0M
Typ.
Max.
10
50
-
±10
-
±10
Apr. 2. 2003 Preliminary
0.4
1. The 3rd Byte ID after 90h ID read command is don’t cared.
Apr. 9. 2003 Preliminary
The 5th Byte ID after 90h ID read command is deleted.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
3. Pb-free Package is added.
K9F2G08Q0M-PCB0,PIB0
K9F2G08U0M-PCB0,PIB0
K9F2G16U0M-PCB0,PIB0
K9F2G16Q0M-PCB0,PIB0
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
1