K8S6415ETB Datasheet, PDF (30/39 Pages) Samsung semiconductor – 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory

K8S6415ET(B)B
SWITCHING WAVEFORMS
Program Operations
FLASH MEMORY
AVD
A16:A21
Program Command Sequence (last two cycles)
tAS
tWEA
tAVDP
tAH
PA
A/DQ0:
A/DQ15
CE
555h
A0h
PA
PD
tDS
tDH
OE
tCH
tWP
WE
CLK
tCS
VIL
tVCS
tWPH
tWC
VCC
Read Status Data
VA
VA
VA
In
Progress
VA
Complete
tPGM
Notes:
1. PA = Program Address, PD = Program Data, VA = Valid Address for reading status bits.
2. “In progress” and “complete” refer to status of program operation.
3. A16–A21 are don’t care during command sequence unlock cycles.
4. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Figure 10. Program Operation Timing
30
Revision 1.1
January, 2006