K4S640832K Datasheet, PDF (3/14 Pages) Samsung semiconductor – 64Mb K-die SDRAM

K4S640832K
K4S641632K
2M x 8Bit x 4Banks / 1M x 16Bit x 4Banks SDRAM
Synchronous DRAM
FEATURES
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock
• Burst read single-bit write operation
• DQM (x8) & L(U)DQM (x16) for masking
• Auto & self refresh
• 64ms refresh period (4K cycle)
• Pb/Pb-free Package
• RoHS compliant for Pb-free Package
GENERAL DESCRIPTION
The K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8
bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows
precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies,
programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
Ordering Information
Part No.
K4S640832K-T(U)C/L75
K4S641632K-T(U)C/L50
K4S641632K-T(U)C/L60
K4S641632K-T(U)C/L75
Orgainization
8Mb x 8
4Mb x 16
Max Freq.
133MHz(CL=3)
200MHz(CL=3)
166MHz(CL=3)
133MHz(CL=3)
Interface
LVTTL
Package
54pin TSOP(II)
Pb (Pb-free)
Organization
8Mx8
4Mx16
Row Address
A0~A11
A0~A11
Column Address
A0-A8
A0-A7
Row & Column address configuration
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Rev. 1.1 February 2006