K4S640832K Datasheet, PDF (12/14 Pages) Samsung semiconductor – 64Mb K-die SDRAM

K4S640832K
K4S641632K
IBIS SPECIFICATION
IOH Characteristics (Pull-up)
Voltage
200MHz/133MHz 200MHz/133MHz
Min
Max
(V)
I (mA)
I (mA)
3.45
-
-1.68
3.30
-
-19.11
3.00
-0.35
-51.87
2.70
-3.75
-90.44
2.50
-6.65
-107.31
1.95
-13.75
-137.9
1.80
-17.75
-158.34
1.65
-20.55
-173.6
1.50
-23.55
-188.79
1.40
-26.2
-199.01
1.00
-36.25
-241.15
0.20
-46.5
-351.68
Synchronous DRAM
200MHz/133MHz Pull-up
0 0.5 1 1.5 2 2.5 3 3.5
0
-100
-200
-300
-400
-500
-600
Voltage
IOH Min (200MHz / 133MHz)
IOH Max (200MHz / 133MHz)
IOL Characteristics (Pull-down)
Voltage
200MHz/133MHz 200MHz/133MHz
Min
Max
(V)
I (mA)
I (mA)
3.45
43.92
155.82
3.30
-
-
3.00
43.36
153.72
1.95
41.20
148.40
1.80
40.56
146.02
1.65
39.60
141.75
1.50
38.40
136.08
1.40
37.28
131.39
1.00
30.08
105.84
0.85
26.64
93.66
0.65
21.52
75.25
0.40
14.16
49.14
200MHz/133MHz Pull-down
250
200
150
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5
Voltage
IOL Min (200MHz / 133MHz)
IOL Max (200MHz / 133MHz)
12 of 14
Rev. 1.1 February 2006