K4T51083QC Datasheet, PDF(27/29 Page) Samsung semiconductor

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K4T51083QC Datasheet, PDF (27/29 Pages) Samsung semiconductor – 512Mb C-die DDR2 SDRAM

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512Mb C-die DDR2 SDRAM

DDR2 SDRAM

VOH + x mV

VOH + 2x mV

tHZ

tRPST end point

VOL + 2x mV

VOL + x mV

tHZ,tRPST end point = 2*T1-T2

VTT + 2x mV

VTT + x mV

tLZ

tRPRE begin point

VTT - x mV

VTT - 2x mV

tLZ,tRPRE begin point = 2*T1-T2

29. Input waveform timing with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the VIH(ac) level to the differen-

tial data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL(ac) level to the differential data strobe crosspoint for a falling sig-

nal applied to the device under test.

30. Input waveform timing with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the VIH(dc) level to the differen-

tial data strobe crosspoint for a rising signal and VIL(dc) to the differential data strobe crosspoint for a falling signal applied to the device under test.

Differential Input waveform timing

DQS

tDS tDH

VDDQ

VIH(ac) min

VIH(dc) min

VREF(dc)

VIL(dc) max

VIL(ac) max

VSS

Page 27 of 29

Rev. 1.4 Aug. 2005

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