K4T51083QC Datasheet, PDF (21/29 Pages) Samsung semiconductor – 512Mb C-die DDR2 SDRAM

512Mb C-die DDR2 SDRAM
DDR2 SDRAM
Parameter
Exit self refresh to a read command
Exit precharge power down to any non-read
command
Exit active power down to read command
Exit active power down to read command
(slow exit, lower power)
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE
asynchronously drops LOW
Symbol
tXSRD
DDR2-800
min
max
200
DDR2-667
min
max
200
DDR2-533
min
max
200
DDR2-400
min
max
200
Units Notes
tCK
tXP
2
x
2
x
2
x
2
x
tCK
tXARD
2
x
2
x
2
x
2
x
tCK
9
tXARDS
8 - AL
7 - AL
6 - AL
6 - AL
tCK 9, 10
t_CKE
t_AOND
t_AON
t_AONPD
t_AOFD
t_AOF
t_AOFPD
tANPD
tAXPD
tOIT
tDelay
3
3
3
3
tCK
2
2
2
2
2
2
2
2
tCK
tAC(min)
tAC(max)
+0.7
tAC(min)
tAC(max)
+0.7
tAC(min)
tAC(max)
+1
tAC(min)
tAC(max)
+1
ns
tAC(min)+
2
2tCK+tAC
(max)+1
tAC(min)+
2
2tCK+tAC
(max)+1
tAC(min)+
2
2tCK+tA
C(max)+
1
tAC(min)+
2
2tCK+tAC
(max)+1
ns
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
tCK
tAC(min)
tAC(max)
+ 0.6
tAC(min)
tAC(max)
+ 0.6
tAC(min)
tAC(max)+
0.6
tAC(min)
tAC(max)+
0.6
ns
tAC(min)+
2
2.5tCK+
tAC(max)
+1
tAC(min)+
2
2.5tCK+
tAC(max)
+1
tAC(min)+
2
2.5tCK+
tAC(max)
+1
tAC(min)+
2
2.5tCK+
tAC(max)
+1
ns
3
3
3
3
tCK
8
8
8
8
tCK
0
12
0
12
0
12
0
12
ns
tIS+tCK
+tIH
tIS+tCK
+tIH
tIS+tCK
+tIH
tIS+tCK
+tIH
ns
36
13, 25
26
24
Page 21 of 29
Rev. 1.4 Aug. 2005