K4T51083QC Datasheet, PDF (25/29 Pages) Samsung semiconductor – 512Mb C-die DDR2 SDRAM

512Mb C-die DDR2 SDRAM
18. tIS and tIH (input setup and hold) derating.
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Command/Ad- ^0.9
dress Slew
rate
0.8
(V/ns)
0.7
0.6
0.5
0.4
0.3
0.25
0.2
0.15
tIS, tIH Derating Values for DDR2-400, DDR2-533
CK,CK Differential Slew Rate
2.0 V/ns
1.5 V/ns
1.0 V/ns
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIH
+187
+94
+217
+124
+247
+154
+179
+89
+209
+119
+239
+149
+167
+83
+197
+113
+227
+143
+150
+75
+180
+105
+210
+135
+125
+45
+155
+75
+185
+105
+83
+21
+113
+51
+143
+81
0
0
+30
+30
+60
60
-11
-14
+19
+16
+49
+46
-25
-31
+5
-1
+35
+29
-43
-54
-13
-24
+17
+6
-67
-83
-37
-53
-7
-23
-110
-125
-80
-95
-50
-65
-175
-188
-145
-158
-115
-128
-285
-292
-255
-262
-225
-232
-350
-375
-320
-345
-290
-315
-525
-500
-495
-470
-465
-440
-800
-708
-770
-678
-740
-648
DDR2 SDRAM
Units
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
Notes
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.9
Command/Ad-
dress Slew
0.8
rate
(V/ns)
0.7
0.6
0.5
0.4
0.3
0.25
0.2
0.15
0.1
∆tIS and ∆tIH Derating Values for DDR2-667, DDR2-800
CK,CK Differential Slew Rate
2.0 V/ns
1.5 V/ns
1.0 V/ns
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIH
+150
+94
+180
+124
+210
+154
+143
+89
+173
+119
+203
+149
+133
+83
+163
+113
+193
+143
+120
+75
+150
+105
+180
+135
+100
+45
+130
+75
+160
+105
+67
+21
+97
+51
+127
+81
0
0
+30
+30
+60
+60
-5
-14
+25
+16
+55
+46
-13
-31
+17
-1
+47
+29
-22
-54
+8
-24
+38
+6
-34
-83
-4
-53
+26
-23
-60
-125
-30
-95
0
-65
-100
-188
-70
-158
-40
-128
-168
-292
-138
-262
-108
-232
-200
-375
-170
-345
-140
-315
-325
-500
-295
-470
-265
-440
-517
-708
-487
-678
-457
-648
-1000
-1125
-970
-1095
-940
-1065
Units
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
Notes
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Page 25 of 29
Rev. 1.4 Aug. 2005