K4H510438G Datasheet, PDF (23/24 Pages) Samsung semiconductor – 512Mb G-die DDR SDRAM Specification

K4H510438G
K4H510838G
K4H511638G
DDR SDRAM
90
80
70
60
50
40
30
20
10
0
0.0
Maximum
Typical High
Typical Low
Minimum
1.0
2.0
Pulldown Characteristics for Weak Output Driver
Vout(V)
0.0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
1.0
2.0
Pullup Characteristics for Weak Output Driver
Minumum
Typical Low
Typical High
Maximum
V_OUT(V)
Figure 5. I/V characteristics for input/output buffers:Pulldown(above) and pullup(below)
23 of 24
Rev. 1.1 November 2009