K4H510438G Datasheet, PDF (14/24 Pages) Samsung semiconductor – 512Mb G-die DDR SDRAM Specification

K4H510438G
K4H510838G
K4H511638G
DDR SDRAM
16.0 AC Operating Conditions
Parameter/Condition
Symbol
Min
Max
Unit
Input High (Logic 1) Voltage, DQ, DQS and DM signals
V_IH(AC) V_REF + 0.31
V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
V_IL(AC)
V_REF - 0.31
V
Input Differential Voltage, CK and CK inputs
V_ID(AC)
0.7
V_DDQ+0.6
V
Input Crossing Point Voltage, CK and CK inputs
V_IX(AC) 0.5*V_DDQ-0.2 0.5*V_DDQ+0.2
V
Note :
1. V_ID is the magnitude of the difference between the input level on CK and the input level on CK.
2. The value of V_IX is expected to equal 0.5*V_DDQ of the transmitting device and must track variations in the dc level of the same.
Note
1
2
17.0 AC Overshoot/Undershoot specification for Address and Control Pins
Parameter
DDR400
Specification
DDR333
DDR266
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
1.5 V
1.5 V
1.5 V
1.5 V
1.5 V
1.5 V
The area between the overshoot signal and V_DD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
4.5 V-ns
4.5 V-ns
4.5 V-ns
4.5 V-ns
4.5 V-ns
4.5 V-ns
V_{DD Overshoot}
5
4
3
Maximum Amplitude = 1.5V
2
Area
1
0
-1
-2
Maximum Amplitude = 1.5V
-3
-4
GND
-5
0 0.6875 1.5 2.5 3.5 4.5 5.5 6.3125 7.0
0.5 1.0 2.0 3.0 4.0 5.0 6.0 6.5
Tims(ns)
undershoot
AC overshoot/Undershoot Definition
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Rev. 1.1 November 2009