K4H510438G Datasheet, PDF (15/24 Pages) Samsung semiconductor – 512Mb G-die DDR SDRAM Specification

K4H510438G
K4H510838G
K4H511638G
DDR SDRAM
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
Parameter
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and V_DD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DDR400
1.2 V
1.2 V
2.4 V-ns
2.4 V-ns
Specification
DDR333
1.2 V
1.2 V
2.4 V-ns
2.4 V-ns
DDR266
1.2 V
1.2 V
2.4 V-ns
2.4 V-ns
V_DDQOvershoot
5
4
Maximum Amplitude = 1.2V
3
2
Area
1
0
-1
-2
Maximum Amplitude = 1.2V
-3
GND
-4
-5
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Tims(ns)
undershoot
DQ/DM/DQS AC overshoot/Undershoot Definition
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Rev. 1.1 November 2009