K8S6815ETD Datasheet, PDF (22/48 Pages) Samsung semiconductor – 64Mb D-die SLC NOR FLASH

K8S6815ET(B)D
Rev. 1.2
datasheet NOR FLASH MEMORY
12.0 ABSOLUTE MAXI010MUM RATINGS
Parameter
Symbol
Rating
Vcc
Vcc
-0.5 to +2.5
Voltage on any pin relative to VSS
VPP
VIN
All Other Pins
-0.5 to +9.5
-0.5 to +2.5
Temperature Under Bias
Commercial
Extended
Tbias
-10 to +125
-25 to +125
Storage Temperature
Tstg
-65 to +150
Short Circuit Output Current
IOS
5
Operating Temperature
TA (Commercial Temp.)
TA (Extended Temp.)
0 to +70
-25 to + 85
NOTE :
1) Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level may fall to -2.0V for periods <20ns.
Maximum DC voltage is Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2) Minimum DC input voltage is -0.5V on VPP. During transitions, this level may fall to -2.0V for periods <20ns.
Maximum DC input voltage is +9.5V on VPP which, during transitions, may overshoot to +12.0V for periods <20ns.
3) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Unit
V
°C
°C
mA
°C
°C
13.0 RECOMMENDED OPERATING CONDITIONS (Voltage reference to GND)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
VCC
1.7
1.8
1.95
V
Supply Voltage
VSS
0
0
0
V
14.0 DC CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Leakage Current
ILI
VIN=VSS to VCC, VCC=VCCmax
- 1.0
-
+ 1.0
μA
VPP Leakage Current
VCC=VCCmax , VPP=VCCmax
ILIP
VCC=VCCmax , VPP=9.5V
- 1.0
-
+ 1.0
μA
-
-
35
μA
Output Leakage Current
ILO
VOUT=VSS to VCC, VCC=VCCmax, OE=VIH
- 1.0
-
+ 1.0
μA
Active Burst Read Current
ICCB1 CE=VIL, OE=VIH (Continuous Burst, 108Mhz)
-
24
36
mA
Active Asynchronous
Read Current
ICC1 CE=VIL, OE=VIH
10MHz
-
27
40
mA
Active Write Current (Note 2)
ICC2 CE=VIL, OE=VIH, WE=VIL, VPP=VIH
-
15
30
mA
Read While Write Current
ICC3 CE=VIL, OE=VIH
-
40
70
mA
Accelerated Program Current
ICC4 CE=VIL, OE=VIH , VPP=9.5V
-
15
30
mA
Standby Current
ICC5 CE= RESET=VCC ± 0.2V
-
15
50
μA
Standby Current During Reset
ICC6 RESET = VSS ± 0.2V
-
15
50
μA
Automatic Sleep Mode(Note 3)
ICC7
CE=VSS ± 0.2V, Other Pins=VIL or VIH
VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
-
15
50
μA
Input Low Voltage
VIL
-0.5
-
0.4
V
Input High Voltage
VIH
VCC-0.4
-
VCC+0.4
V
Output Low Voltage
VOL IOL = 100 μA , VCC=VCCmin
-
-
0.1
V
Output High Voltage
VOH IOH = -100 μA , VCC=VCCmin
VCC-0.1
-
-
V
Voltage for Accelerated Program
VID
8.5
9.0
9.5
V
Low VCC Lock-out Voltage
VLKO
NOTE:
1) Maximum ICC specifications are tested with VCC = VCCmax.
2) ICC active while Internal Erase or Internal Program is in progress.
3) Device enters automatic sleep mode when addresses are stable for tAA + 60ns.
-
-
1.4
V
- 22 -