K4T1G044QA Datasheet, PDF (20/28 Pages) Samsung semiconductor – 1Gb A-die DDR2 SDRAM Specification

1G A-die DDR2 SDRAM
DDR2 SDRAM
Parameter
Symbol
CAS to CAS command delay
tCCD
Write recovery time
tWR
Auto precharge write recovery + precharge time tDAL
Internal write to read command delay
tWTR
Internal read to precharge command delay
tRTP
Exit self refresh to a non-read command
tXSNR
Exit self refresh to a read command
tXSRD
Exit precharge power down to any non-read com-
tXP
mand
Exit active power down to read command
tXARD
Exit active power down to read command
(slow exit, lower power)
tXARDS
CKE minimum pulse width
(high and low pulse width)
t_CKE
ODT turn-on delay
t_AOND
ODT turn-on
t_AON
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
t_AONPD
t_AOFD
t_AOF
ODT turn-off (Power-Down mode)
t_AOFPD
ODT to power down entry latency
tANPD
ODT power down exit latency
tAXPD
OCD drive mode output delay
tOIT
Minimum time clocks remains ON after CKE asyn-
tDelay
chronously drops LOW
DDR2-667
min
max
2
15
x
WR+tRP
x
7.5
x
7.5
tRFC + 10
200
2
x
2
x
7 - AL
DDR2-533
min
max
2
15
x
WR+tRP
x
7.5
x
7.5
tRFC + 10
200
2
x
2
x
6 - AL
DDR2-400
min
max
2
15
x
WR+tRP
x
10
x
7.5
tRFC + 10
200
2
x
2
x
6 - AL
Units Notes
tCK
ns
tCK
23
ns
33
ns
11
ns
tCK
tCK
tCK
9
tCK 9, 10
3
3
3
tCK
36
2
2
2
2
2
2
tCK
tAC(max)+0.
tAC(min)
tAC(min) tAC(max)+1 tAC(min) tAC(max)+1 ns 13, 25
7
2tCK+tAC(m
2tCK+tAC(m
2tCK+tAC
tAC(min)+2
tAC(min)+2
tAC(min)+2
ns
ax)+1
ax)+1
(max)+1
2.5
2.5
2.5
2.5
2.5
2.5
tCK
tAC(max)+
tAC(min)
tAC(min) tAC(max)+ 0.6 tAC(min) tAC(max)+ 0.6 ns
26
0.6
2.5tCK+tAC(
2.5tCK+
2.5tCK+
tAC(min)+2
tAC(min)+2
tAC(min)+2
ns
max)+1
tAC(max)+1
tAC(max)+1
3
3
3
tCK
8
8
8
tCK
0
12
0
12
0
12
ns
tIS+tCK +tIH
tIS+tCK +tIH
tIS+tCK +tIH
ns
24
Page 20 of 28
Rev. 1.1 Aug. 2005