K4T1G044QA Datasheet, PDF (18/28 Pages) Samsung semiconductor – 1Gb A-die DDR2 SDRAM Specification

1G A-die DDR2 SDRAM
DDR2 SDRAM
Input/Output capacitance
Parameter
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Symbol
CCK
CDCK
CI
CDI
CIO
CDIO
DDR2-400/533
Min
Max
1.0
2.0
x
0.25
1.0
2.0
x
0.25
2.5
4.0
x
0.5
Electrical Characteristics & AC Timing for DDR2-667/533/400
DDR2-667
Min
Max
1.0
2.0
x
0.25
1.0
2.0
x
0.25
2.5
3.5
x
0.5
Units
pF
pF
pF
pF
pF
pF
(0 °C < T_CASE < 95 °C; V_DDQ = 1.8V + 0.1V; V_DD = 1.8V + 0.1V)
Refresh Parameters by Device Density
Parameter
Refresh to active/Refresh command time
tRFC
Average periodic refresh interval
tREFI
Symbol
0 °C ≤ T_CASE ≤ 85°C
85 °C < T_CASE ≤ 95°C
256Mb
75
7.8
3.9
512Mb
105
7.8
3.9
1Gb
127.5
7.8
3.9
2Gb
195
7.8
3.9
4Gb
327.5
7.8
3.9
Units
ns
µs
µs
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Speed
Bin (CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tRCD
tRP
tRC
tRAS
DDR2-667(E6)
5 - 5- 5
min
max
5
8
3.75
8
3
8
15
-
15
-
54
-
39
70000
DDR2-533(D5)
4-4-4
min
max
5
8
3.75
8
3.75
8
15
-
15
-
55
-
40
70000
DDR2-400(CC)
3-3-3
min
max
5
8
5
8
-
-
15
-
15
-
55
-
40
70000
Units
ns
ns
ns
ns
ns
ns
ns
Page 18 of 28
Rev. 1.1 Aug. 2005