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K4T1G044QA Datasheet, PDF (11/28 Pages) Samsung semiconductor – 1Gb A-die DDR2 SDRAM Specification
1G A-die DDR2 SDRAM
DDR2 SDRAM
Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to VSS
- 1.0 V ~ 2.3 V
V
1
VDDQ
Voltage on VDDQ pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
VDDL
Voltage on VDDL pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
VIN, VOUT Voltage on any pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
TSTG
Storage Temperature
-55 to +100
°C
1, 2
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
standard.
AC & DC Operating Conditions
Recommended DC Operating Conditions (SSTL - 1.8)
Symbol
Parameter
Min.
Rating
Typ.
Max.
Units
Notes
VDD
VDDL
Supply Voltage
Supply Voltage for DLL
1.7
1.8
1.9
V
1.7
1.8
1.9
V
4
VDDQ
VREF
VTT
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
1.7
1.8
1.9
V
4
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
mV
1,2
VREF-0.04
VREF
VREF+0.04
V
3
Note : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal
to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5
x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDL tied together.
Page 11 of 28
Rev. 1.1 Aug. 2005