K4D263238G-GC Datasheet, PDF (2/20 Pages) Samsung semiconductor – 128Mbit GDDR SDRAM

K4D263238G-GC
128M GDDR SDRAM
Revision History
Revision 1.8 (March 5, 2005)
• Remove 80% and 120% of the IBIS(I - V) curve in the data sheet
Revision 1.7 (February 5, 2005)
• Changed EMRS table for Driver Impedance control .
• Added IBIS (I - V) curve in the data sheet
Revision 1.6 (January 5, 2005)
• Added 200MHz/ 166MHz AC characteristics in AC CHARACTERISTICS (II) table of K4D263238G-VC2A and
K4D263238G-VC33.
• Typo corrected
Revision 1.5 (December 29, 2004)
• Added tCK(min)=5ns @ CL3
• Changed tCK(max) of K4D263238G-GC2A from 4ns to 10ns
Revision 1.4 (November 30, 2004)
• Typo Corrected in DC table
Revision 1.3 (November 12, 2004)
• Changed AC spec format
• Changed DC spec measurement condition from VDD(typ) to VDD(max)
Revision 1.2 (October 18, 2004)
• Changed unit of tWR and tWR_A from ns to tCK to avoid misuse.
• Added lower speed timing set
Revision 1.1 (August 31, 2004)
• Added 100% driver strength option as A6A1="11"
Revision 1.0 (July 12, 2004)
• Defined DC spec
Revision 0.4 (June 20, 2004)
• Removed K4D26323QG-GC40/45 from the spec
• Added dummy cycle (20tCK) between EMRS and MRS during the power-up sequence.
Revision 0.3 (June 8, 2004)
• Internal only
Revision 0.2 (April 22, 2004)
• Changed CAS latency of K4D263238G-GC2A from 4tCK to 5tCK
• Changed tWR & tWR_A of K4D263238G-GC2A from 4tCK to 5tCK
-2-
Rev 1.8 (March. 2005)