K4D263238G-GC Datasheet, PDF (19/20 Pages) Samsung semiconductor – 128Mbit GDDR SDRAM

K4D263238G-GC
128M GDDR SDRAM
Simplified Timing @ BL=2, CL=4
tCH
tCL
tCK
0
1
2
3
4
5
CK, CK
CS
DQS
DQ
DM
COMMAND _READA
tRPRE
tDQSCK
tRPST
tDQSQ
tAC
Qa1 Qa2
6
7
8
tIS
tIH
tDQSS
tWPREH
tDQSH
tDQSL
tWPRES
tDS tDH
Db0 Db1
WRITEB
Simplified Timing(2) @ BL=4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
CK, CK
BA[1:0] _BAa
BAa
BAa
BAa
BAb BAa
BAb
A8/AP R_Ra_a
ADDR
(A0~A7, _Ra
Ca
A9,A10)
WE
Ra
Rb
Ra
Rb
Ca
Cb
DQS
DQ
Da0 Da1 Da2 Da3
DM
COMMAND
ACTIVEA
WRITEA
tRCD
tRAS
tRC
Normal Write Burst
(@ BL=4)
Da0 Da1 Da2 Da3 Db0 Db1 Db2 Db3
PRECH
ACTIVEA
ACTIVEB WRITEA
WRITEB
tRP
tRRD
Multi Bank Interleaving Write Burst
(@ BL=4)
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Rev 1.8 (March. 2005)