K4D263238G-GC Datasheet, PDF (11/20 Pages) Samsung semiconductor – 128Mbit GDDR SDRAM

K4D263238G-GC
IBIS : I/V Characteristics for Input and Output Buffers
128M GDDR SDRAM
Voltage
(V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
Pulldown Current (mA)
60%
100%
-0.2
-0.36
2.12
3.04
4.32
6.24
6.44
9.32
8.32
12.2
10.0
14.8
11.6
17.1
13.0
19.0
14.0
20.7
15.0
22.0
15.6
23.0
16.1
23.7
16.5
24.2
16.8
24.6
17.0
25.0
17.0
25.1
17.2
25.3
17.3
25.4
17.4
25.6
17.4
25.6
17.5
25.8
17.6
25.8
17.6
25.9
17.7
26.0
17.7
26.1
17.8
26.1
17.8
26.2
17.8
26.2
Pullup Current (mA)
60%
100%
5.04
2.64
0.24
-2.0
-4.2
-6.28
-8.28
-10.2
-11.9
-13.6
-15.1
-16.5
-17.8
-18.8
-19.9
-20.6
-21.4
-22.1
-22.6
-23.1
-23.5
-23.8
-24.2
-24.4
-24.7
-24.9
-25.2
-25.4
8.12
4.28
0.52
-3.08
-6.52
-9.84
-13.0
-16.0
-18.8
-21.5
-23.9
-26.1
-28.1
-29.9
-31.5
-32.9
-34.1
-35.1
-36.0
-36.7
-37.4
-37.9
-38.4
-38.9
-39.3
-39.7
-40.1
-40.4
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Rev 1.8 (March. 2005)