K3P7V1000 Datasheet, PDF (2/4 Pages) Samsung semiconductor – 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM

K3P7V(U)1000B-YC
PIN CONFIGURATION
CMOS MASK ROM
BHE 1
A16 2
A15 3
A14 4
A13 5
A12 6
A11 7
A10 8
A9 9
A8 10
A19 11
A21 12
A20 13
A18 14
A17 15
A7 16
A6 17
A5 18
A4 19
A3 20
A2 21
A1 22
A0 23
CE 24
TSOP1
48 VSS
47 VSS
46 Q15/A-1
45 Q7
44 Q14
43 Q6
42 Q13
41 Q5
40 Q12
39 Q4
38 VCC
37 VCC
36 N.C
35 Q11
34 Q3
33 Q10
32 Q2
31 Q9
30 Q1
29 Q8
28 Q0
27 OE
26 VSS
25 VSS
K3P7V(U)1000B-YC
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
Temperature Under Bias
Storage Temperature
VIN
-0.3 to +4.5
V
TBIAS
-10 to +85
°C
TSTG
-55 to +150
°C
NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the
conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
RECOMMENDED OPERATING CONDITIONS(Voltage reference to VSS, TA=0 to 70°C)
Item
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
2.7/3.0
3.0/3.3
3.3/3.6
V
Supply Voltage
VSS
0
0
0
V
DC CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Max Unit
Operating Current
ICC
Cycle=5MHZ, all outputs open, CE=OE=VIL, ^{VCC=3.3V±0.3V}
VIN=0.45V to 2.4V (AC Test Condition)
VCC=3.0V±0.3V
-
60 mA
50 mA
Standby Current(TTL)
ISB1 CE=VIH, all outputs open
500 µA
Standby Current(CMOS)
ISB2 CE=VCC, all outputs open
50
µA
Input Leakage Current
ILI VIN=0 to VCC
-
10
µA
Output Leakage Current
ILO VOUT=0 to VCC
-
10
µA
Input High Voltage, All Inputs VIH
2.0 VCC+0.3 V
Input Low Voltage, All Inputs VIL
-0.3
0.6
V
Output High Voltage Level
VOH IOH=-400µA
2.4
-
V
Output Low Voltage Level
VOL IOL=2.1mA
-
0.4
V
NOTE : Minimum DC Voltage(VIL) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input pins(VIH) is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.