K3P7V1000 Datasheet, PDF (1/4 Pages) Samsung semiconductor – 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM

K3P7V(U)1000B-YC
CMOS MASK ROM
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
FEATURES
• Switchable organization
8,388,608 x 8(byte mode)
4,194,304 x 16(word mode)
• Fast access time
Random Access Time/Page Access Time
3.3V Operation : 100/30ns(Max.)@CL=50pF,
120/40ns(Max.)@CL=100pF
3.0V Operation : 120/40ns(Max.)@CL=100pF
8 Words / 16 Bytes page access
• Supply voltage : single +3.0V/ single +3.3V
• Current consumption
Operating : 60mA(Max.)
Standby : 50µA(Max.)
• Fully static operation
• All inputs and outputs TTL compatible
• Three state outputs
• Package
K3P7V(U)1000B-YC : 48-TSOP1-1218
GENERAL DESCRIPTION
The K3P7V(U)1000B-YC is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 8,388,608 x 8 bit(byte mode) or as
4,194,304 x 16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device includes page read mode function, page read mode
allows 8 words (or 16 bytes) of data to read fast in the same
page, CE and A3 ~ A21 should not be changed.
This device operates with 3.0V or 3.3V power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The K3P7V(U)1000B-YC is packaged in a 48-TSOP1.
FUNCTIONAL BLOCK DIAGRAM
A21
.
.
.
.
.
.
.
.
A3
A0~A2
A-1
X
BUFFERS
AND
DECODER
Y
BUFFERS
AND
DECODER
CE
OE
BHE
CONTROL
LOGIC
MEMORY CELL
MATRIX
(4,194,304x16/
8,388,608x8)
SENSE AMP.
DATA OUT
BUFFERS
...
Q0/Q8 Q7/Q15
Pin Name
A0 - A2
A3 - A21
Q0 - Q14
Q15 /A-1
BHE
CE
OE
VCC
Vss
N.C
Pin Function
Page Address Inputs
Address Inputs
Data Outputs
Output 15(Word mode)/
LSB Address(Byte mode)
Word/Byte selection
Chip Enable
Output Enable
Power
Ground
No Connection