K4H560438E-ZC Datasheet, PDF (17/23 Pages) Samsung semiconductor – 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)

DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
DDR SDRAM
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Delta Slew Rate
tDS
tDH
Units
Notes
+/- 0.0 V/ns
0
0
ps
j
+/- 0.25 V/ns
+50
+50
ps
j
+/- 0.5 V/ns
+100
+100
ps
j
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
Pulldown slew
1.2 ~ 2.5
1.0
4.5
Notes
a,c,d,f,g,h
b,c,d,f,g,h
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
Pulldown slew
1.2 ~ 2.5
0.7
5.0
Notes
a,c,d,f,g,h
b,c,d,f,g,h
Table 7 : Output Slew Rate Matching Ratio Characteristics
AC CHARACTERISTICS
DDR266A
PARAMETER
MIN
MAX
Output Slew Rate Matching Ratio (Pullup to Pulldown) TBD
TBD
DDR266B
MIN
MAX
TBD
TBD
DDR200
MIN
MAX
0.67
1.5
Notes
e,m
Rev. 1.1 October, 2004