K4H560438E-ZC Datasheet, PDF (16/23 Pages) Samsung semiconductor – 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)

DDR SDRAM 256Mb E-die (x4, x8) Pb-Free
DDR SDRAM
Parameter
Symbol
Mode register set cycle time
DQ & DM setup time to DQS
DQ & DM hold time to DQS
Control & Address input pulse width
DQ & DM input pulse width
Power down exit time
Exit self refresh to non-Read command
Exit self refresh to read command
Refresh interval time
Output DQS valid window
tMRD
tDS
tDH
tIPW
tDIPW
tPDEX
tXSNR
tXSRD
tREFI
tQH
Clock half period
Data hold skew factor
DQS write postamble time
Active to Read with Auto precharge
command
Autoprecharge write recovery +
Precharge time
tHP
tQHS
tWPST
tRAP
tDAL
B3
(DDR333@CL=2.5))
Min
Max
12
0.45
0.45
2.2
1.75
6
75
200
7.8
tHP
-tQHS
-
tCLmin
or tCHmin
-
0.55
0.4
0.6
18
(tWR/tCK)
+
(tRP/tCK)
A2
(DDR266@CL=2.0)
Min
Max
15
0.5
0.5
2.2
1.75
7.5
75
200
7.8
tHP
-tQHS
-
tCLmin
or tCHmin
-
0.75
0.4
0.6
20
(tWR/tCK)
+
(tRP/tCK)
B0
(DDR266@CL=2.5))
Min
Max
15
0.5
0.5
2.2
1.75
7.5
75
200
7.8
tHP
-tQHS
-
tCLmin
or tCHmin
-
0.75
0.4
0.6
20
(tWR/tCK)
+
(tRP/tCK)
Unit Note
ns
ns
j, k
ns
j, k
ns
8
ns
8
ns
ns
tCK
us
4
ns
11
ns 10, 11
ns
11
tCK
2
tCK
13
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure
proper system performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
AC CHARACTERISTICS
PARAMETER
SYMBOL
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
DDR333
MIN
MAX
TBD
TBD
DDR266
MIN
MAX
TBD
TBD
DDR200
MIN
MAX
0.5
4.0
Units
V/ns
Notes
a, m
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Input Slew Rate
tIS
tIH
Units
0.5 V/ns
0
0
ps
0.4 V/ns
+50
0
ps
0.3 V/ns
+100
0
ps
Notes
i
i
i
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Input Slew Rate
tDS
tDH
Units
0.5 V/ns
0
0
ps
0.4 V/ns
+75
+75
ps
0.3 V/ns
+150
+150
ps
Notes
k
k
k
Rev. 1.1 October, 2004