K4H1G0438M Datasheet, PDF (16/23 Pages) Samsung semiconductor – 1Gb M-die DDR SDRAM Specification

DDR SDRAM 1Gb M-die (x4, x8)
DDR SDRAM
Parameter
Symbol
Mode register set cycle time
DQ & DM setup time to DQS
DQ & DM hold time to DQS
tMRD
tDS
tDH
Control & Address input pulse
tIPW
DQ & DM input pulse width
Power down exit time
Exit self refresh to non-Read com-
tDIPW
tPDEX
tXSNR
Exit self refresh to read command tXSRD
Refresh interval time
tREFI
Output DQS valid window
tQH
Clock half period
tHP
Data hold skew factor
tQHS
DQS write postamble time
tWPST
Active to Read with Auto precharge
command
tRAP
Autoprecharge write recovery +
Precharge time
tDAL
B3
(DDR333@CL=2.5))
Min
Max
12
0.45
0.45
2.2
1.75
6
75
200
7.8
tHP
-tQHS
-
tCLmin
or tCHmin
-
0.55
0.4
0.6
18
(tWR/tCK)
+
(tRP/tCK)
A2
(DDR266@CL=2.0)
Min
Max
15
0.5
0.5
2.2
1.75
7.5
75
200
7.8
tHP
-tQHS
-
tCLmin
or tCHmin
-
0.75
0.4
0.6
20
(tWR/tCK)
+
(tRP/tCK)
B0
(DDR266@CL=2.5)
Min
Max
15
0.5
0.5
2.2
1.75
7.5
75
200
7.8
tHP
-tQHS
-
tCLmin
or tCHmin
-
0.75
0.4
0.6
20
(tWR/tCK)
+
(tRP/tCK)
Unit Note
ns
ns
j, k
ns
j, k
ns
8
ns
8
ns
ns
tCK
us
4
ns
11
ns
10, 11
ns
11
tCK
2
tCK
13
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333 & DDR266 devices to ensure proper sys-
tem performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
AC CHARACTERISTICS
PARAMETER
SYMBOL
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
DDR333
MIN
MAX
TBD
TBD
DDR266
MIN
MAX
TBD
TBD
Units
V/ns
Notes
a, m
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Input Slew Rate
tIS
tIH
Units
0.5 V/ns
0
0
ps
0.4 V/ns
+50
0
ps
0.3 V/ns
+100
0
ps
Notes
i
i
i
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Input Slew Rate
tDS
tDH
Units
0.5 V/ns
0
0
ps
0.4 V/ns
+75
+75
ps
0.3 V/ns
+150
+150
ps
Notes
k
k
k
Revision 1.0 October, 2004