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K4H1G0438M Datasheet, PDF (12/23 Pages) Samsung semiconductor – 1Gb M-die DDR SDRAM Specification
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DDR SDRAM 1Gb M-die (x4, x8)
DDR SDRAM IDD spec table
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
B3(DDR333@CL=2.5)
140
170
6
35
30
30
60
190
260
300
8
410
256Mx4 (K4H1G0438M)
A2(DDR266@CL=2.0)
120
150
6
30
25
30
55
160
215
285
8
350
DDR SDRAM
(VDD=2.7V, T = 10°C)
B0(DDR266@CL=2.5)
120
150
6
30
25
30
55
160
215
285
8
350
Unit Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA Optional
mA
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
Normal
Low power
IDD7A
B3(DDR333@CL=2.5)
140
170
6
35
30
30
60
200
260
300
8
430
128Mx8 (K4H1G0838M)
A2(DDR266@CL=2.0)
120
150
6
30
25
30
55
170
230
285
8
370
B0(DDR266@CL=2.5)
120
150
6
30
25
30
55
170
230
285
8
370
Unit Notes
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA Optional
mA
Revision 1.0 October, 2004
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