S3C3410X Datasheet, PDF (148/314 Pages) Samsung semiconductor – 16-Bit CMOS Microcontrollers

S3C3410X RISC MICROPROCESSOR
SYSTEM MANAGER
Memory Type = FP DRAM [MT=01 in SYSCFG] or EDO DRAM [MT=10 in SYSCFG]
DBW
[0] Data Bus Width: This bit determines the physical data bus width
for bankx (bank6 and 7)
0 = 8-bit
1 = 16-bit
CAN
[2:1] Column Address Number for DRAM (FP and EDO DRAM).
00 = 8-bit
01 = 9-bit
10 = 10-bit
11 = 11-bit
Tcp
[3] CAS Pre-charge Time. Please refer the timing diagram.
0 = 1 Clock
1 = 2 Clock
Tcas
[6:4] CAS Pulse Width. Please refer the timing diagram.
000 = 1 Clock
001 = 2 Clock
010 = 3 Clock
011 = 4 Clock
100 = 5 Clock
101 = Not used
110 = Not used 111 = Disable
Trc
[7] RAS to CAS Delay Time. Please refer the timing diagram.
0 = 1 Clock
1 = 2 Clock
Trp
[9:8] RAS Pre-charge Time. Please refer the timing diagram.
00 = 1 Clock
01 = 2 Clock
10 = 3 Clock
11 = 4 Clock
BAP
[20:10]
Memory Bank Base Address Pointer: This 11-bit value
corresponds to the upper 11 bits from the total 27-bit system
address bus. It indicates the start address of the corresponding
memory bank(Bankx), based on 64K-byte units. The base
address pointer value is calculated as follows:
Base_Address_Pointer = Start_Address / 10000h, which is
(BAP[20:10] << 16).
If BAP is same with EAP, the corresponding memory bankx will
be disabled
EAP
[31:21] Memory Bank End Address Pointer:
This 11-bit value corresponds to the upper 11 bits from the total
27-bit system address bus. To determine the EAP, please refer
the below equation :
End_Address_Pointer = (End_Address + 1) / 10000h.
(End_Address of corresponding memory bank+ 1) is equal to
(EAP << 16). In this case, End_Address means the end address
of corresponding memory bank by byte address unit, not half-
word or word address unit.
0
00
0
000
0
00
00000000000b
00000000000b
4-12