M470L3324BT Datasheet, PDF (11/20 Pages) Samsung semiconductor – DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die

256MB, 512MB, 1GB Unbuffered SODIMM
DDR SDRAM
9.3 M470L2923BV0 [ (128M x 64) 1GB Module ]
(V_DD=2.7V, T = 10°C)
Symbol
CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5) Unit Notes
IDD0
2,080
1,400
1,280
1,280
mA
IDD1
2,240
1,600
1,480
1,480
mA
IDD2P
80
80
80
80
mA
IDD2F
480
480
480
480
mA
IDD2Q
400
400
400
400
mA
IDD3P
560
480
480
480
mA
IDD3N
1,520
800
800
800
mA
IDD4R
2,360
1,840
1,600
1,600
mA
IDD4W
2,680
1,880
1,640
1,640
mA
IDD5
2,880
2,400
2,320
2,320
mA
Normal
80
80
80
80
mA
IDD6
Low power
48
48
48
48
mA Optional
IDD7A
4,200
3,520
3,120
3,120
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.5 June 2005