K4S560432E-UC Datasheet, PDF (11/14 Pages) Samsung semiconductor – 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in Hi-Z
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
tCC
tSAC
tOH
tCH
tCL
tSS
tSH
tSLZ
tSHZ
60
Min
Max
6
1000
-
5
-
2.5
-
2.5
2.5
1.5
1
1
5
-
75
Unit Note
Min
Max
7.5
1000
ns
1
10
5.4
ns
1,2
6
3
ns
2
3
2.5
ns
3
2.5
ns
3
1.5
ns
3
0.8
ns
3
1
ns
2
5.4
ns
6
Notes : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Output rise time
Output fall time
Output rise time
Output fall time
Symbol
Condition
Min
Typ
Max
trh
Measure in linear
region : 1.2V ~ 1.8V
1.37
4.37
tfh
Measure in linear
region : 1.2V ~ 1.8V
1.30
3.8
trh
Measure in linear
region : 1.2V ~ 1.8V
2.8
3.9
5.6
tfh
Measure in linear
region : 1.2V ~ 1.8V
2.0
2.9
5.0
Notes : _{1. Rise time specification based on 0pF + 50 Ω to VSS, use these values to design to.}
2. Fall time specification based on 0pF + 50 Ω to VDD, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to VSS.
Unit
Volts/ns
Volts/ns
Volts/ns
Volts/ns
Notes
3
3
1,2
1,2
Rev. 1.3 August 2004