DS_K6X8016C3B Datasheet, PDF (1/9 Pages) Samsung semiconductor – 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM

K6X8016C3B Family
Document Title
512Kx16 bit Low Power Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
Initial draft
0.1
Revised
- Deleted 44-TSOP2-400R package type.
- Added Commercial product.
0.11
Revised
- Errata correction : corrected commercial product family name from
K6X8016C3B-F to K6X8016C3B-B in PRODUCT FAMILY.
1.0
Finalized
- Changed ICC from 12mA to 6mA
- Changed ICC1 from 12mA to 7mA
- Changed ICC2 from 60mA to 35mA
- Changed ISB from 3mA to 0.4mA
- Changed ISB1(Commercial) from 40µA to 25µA
- Changed ISB1(industrial) from 40µA to 25µA
- Changed ISB1(Automotive) from 50µA to 40µA
- Changed IDR(Commercial) from 30µA to 15µA
- Changed IDR(industrial) from 30µA to 15µA
- Changed IDR(Automotive) from 40µA to 30µA
Draft Date
October 31, 2002
Remark
Preliminary
December 11, 2002 Preliminary
March 26, 2003
Preliminary
September 16, 2003 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
September 2003