SP2458 Datasheet, PDF (5/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP2458
Ver 3.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
20
VGS = 2.5 V,ID = 8A
VGS = 3.1 V,ID = 9A
15
VGS = 3.5 V,ID = 9A
VGS = 3.9 V,ID = 10A
10
VGS = 4.5 V,ID = 10A
5
0
-50
0
50
100
150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
td(off)
1000
tf
tr
100
td(on)
VDD = 10.0 V
VGS = 4.5 V
RG = 3 Ω
10
0.1
1
10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
VGS = 0 V
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2
VF(S-D) - Source to Drain Voltage - V
5
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
Coss
100
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
4
VDD = 10V
ID = 10 A
3
2
1
0
0
3
6
9
12
15
QG - Gate Charge -nC
Dec,02,2014
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