SP2458 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP2458
Ver 3.0
40
VGS = 4.5 V
30
3.9 V
3.5 V
20
3.1 V
2.5 V
10
0
0
0.2
0.4
0.6
0.8
1
VDS - Drain to Source Voltage - V
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0.9
ID = 250uA
0.8
0.7
0.6
0.5
0.4
-50
0
50
100
150
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
25
20
VGS = 2.5 V
15
3.1 V
3.9 V ^{3.5 V}
10
5
4.5 V
0
0.1
1
10
100
ID - Drain Current - A
4
FORWARD TRANSFER CHARACTERISTICS
100
10
TA = -25°C
125°C
25°C
1
75°C
0.1
0.01
0
0.5 1 1.5 2 2.5 3
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = -25°C
10
25°C
75°C
1
125°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 10 A
30
20
10
0
0
2
4
6
8 10 12
VGS - Gate to Source Voltage - V
Dec,02,2014
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