SP2458 Datasheet, PDF (2/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SP2458
Ver 3.0
ELECTRICAL CHARACTERISTICS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
IDSS
Zero Gate Voltage Drain Current
VDS=20V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±10V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
0.4
VGS=4.5V , ID=10A
5.2
VGS=3.9V , ID=10A
5.5
RDS(ON) Drain-Source On-State Resistance VGS=3.5V , ID=9A
6.0
VGS=3.1V , ID=9A
6.5
VGS=2.5V , ID=8A
7.5
g_FS
Forward Transconductance
VDS=5V , ID=10A
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=10V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS ^b
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD=10V
ID=10A
VGS=4.5V
RGEN= 3 ohm
VDS=10V,ID=10A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch² , 2oz.
Typ
0.7
6.8
7.1
7.3
8.0
10.0
22
290
246
31
147
680
1872
1260
14.0
2.4
7.2
0.72
Max Units
V
1
uA
±10 uA
1.2
V
8.3 m ohm
8.6 m ohm
9.0 m ohm
10.0 m ohm
12.5 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2
V
Dec,02,2014
2
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