STE339S Datasheet, PDF (4/6 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STE339S
30
ID=6A
25
20
15
125 C
10
75 C
25 C
5
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1200
1000
Ciss
800
600
400
200
0
0
Coss
Crss
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20.0
10.0
125 C
5.0
25 C
75 C
Ver 1.0
1.0
0
0.3
0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
VDS=15V
ID=6A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
300
100
10
TD(off )
Tf
TD(on)
Tr
100
10
R ^{DS(ON) Limit}
1
10us
1m¹⁰_s^0us
1¹_s^{001m0ms s}
DC
VDS=15V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
VGS=10V
0.1 _{Single Pulse}
TA=25 C
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Dec,04,2012
4
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