STE339S Datasheet, PDF (1/6 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
STE339S
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
30V
ID
RDS(ON) (mΩ) Max
10.5 @ VGS=10V
12A
15 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount Package.
56 78
PIN 1
Power Pak 5 x 6
12 34
ABSOLUTE MAXIMUM RATINGS (T_A=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous
TA=25°C
TA=70°C
I_DM
-Pulsed ^a
P_D
Maximum Power Dissipation
T_A=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient
Limit
30
±20
12
9.6
42
3.1
2
-55 to 150
40
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Dec,04,2012
www.samhop.com.tw