STE339S Datasheet, PDF (2/6 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STE339S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
IDSS
Zero Gate Voltage Drain Current
VDS=24V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1
RDS(ON)
g_FS
Drain-Source On-State Resistance
Forward Transconductance
VGS=10V , ID=6A
VGS=4.5V , ID=4.6A
VDS=10V , ID=6A
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=15V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS ^b
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
VDD=15V
ID=1A
VGS=10V
RGEN= 6 ohm
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=15V,ID=6A,VGS=10V
VDS=15V,ID=6A,VGS=4.5V
VDS=15V,ID=6A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
Typ
1.8
9
12.5
29
870
163
126
18
18.2
42
18
14.7
7.7
1.7
4.1
0.79
Max Units
V
1
uA
±100 nA
3
V
10.5 m ohm
15 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
1.2
V
Dec,04,2012
2
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