STC3116E Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STC3116E
300
ID=1A
250
200
150
100
50
75 C
125 C
25 C
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
500
Ciss
400
300
200
100
Coss
Crss
0
0
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20.0
10.0
5.0
125 C 25 C
75 C
Ver 1.0
1.0
0
0.4
0.8
1.2
1.6
2.0
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=15V
8
ID=1A
6
4
2
0
0
1
2
3
4
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
5000
1000
VDS=15V,ID=1A
VGS=10V
TD(off )
100
Tf
Tr
TD(on)
10
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
30
10
R ^{DS(ON) Limit}
100us
1ms
1
101s001m0ms ^s
DC
0.1 _{V GS =10V}
S ingle P ulse
T A=25 C
0.1
1
10 30 50
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Jun,14,2012
4
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