STC3116E Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STC3116E ^Gre
Pro
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
30V
ID
RDS(ON) (mΩ) Max
94 @ VGS=10V
2A
107 @ VGS=4.5V
139 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S OT-323
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_A=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TA=25°C
TA=70°C
I_DM
-Pulsed ^b
P_D
Maximum Power Dissipation ^a
TA=25°C
T_A=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient
Limit
30
±12
2
1.6
8
1
0.64
-55 to 150
125
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jun,14,2012
www.samhop.com.tw