STC3116E Datasheet, PDF (3/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STC3116E
9.0
VGS=10V
VGS=4.5V
7.2
VGS=3V
VGS=2.5V
5.4
VGS=2V
3.6
1.8
VGS=1.5V
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
240
200
160
VG S = 2.5V
120
VG S = 4.5V
80
VGS =10V
40
1
0.1
1.8
3.6
5.4
7.2
9.0
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.0
10
8
6
4
2
Tj=125 C
25 C
-55 C
0
0 0.6 1.2 1.8 2.4 3.0 3.6
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.0
V G S =10V
1.8
ID=1A
V G S =4.5V
1.6
ID=0.9A
1.4
1.2
V G S =2.5V
ID= 0.8A
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(°C ) ^{Tj(°C )}
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.20
I D=250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Jun,14,2012
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