STC2200 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

S TC2200
1.3
V DS =V G S
1.2
ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0
25 50 75 100 125
T j, J unction T emperature ( C )
with T emperature
12
10
8
6
4
2
V DS =5V
0
0
3
6
9
12
15
IDS , Drain-S ource C urrent (A)
F igure 7. T rans conductance V ariation
with Drain C urrent
5
VDS =4.5V
4 _ID=2A
3
2
1
0
0 0.7 1.4 2.1 2.8 3.5 4.2 4.9 5.6
Qg, T otal G ate C harge (nC )
F igure 9. G ate C harge
4
1.3
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
20
10
1
T J=25 C
0
0.4 0.8 1.2 1.6 2.0 2.4
V S D, B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
10
R ^{DS(ON) Limit}
11
10ms
100ms
1s
DC
0.1 ^{VGS =4.5V}
S ingle P ulse
0.03 ^{Tc=25 C}
0.1
1
10 20 50
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
O perating Area