STC2200 Datasheet, PDF (3/7 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

S TC2200
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
5 DRAIN-SOURCE DIODE CHARACTERISTICS ^b
Diode Forward Voltage
VSD
VGS = 0V, Is =1A
Min Typ^C Max Unit
0.83 1.2 V
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
V GS =10V
16
V GS =4V
V GS =4.5V
V GS =3V
12
8
4
V GS =2V
0
0 0.5 1 1.5 2 2.5 3
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
15
25 C
12
-55 C
T j=125 C
9
6
3
0
0.0 0.6 1.2 1.8 2.4 3.0 3.6
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
500
400
300
200
C oss
100
C rss
0
05
10 15 20
C is s
25 30
V DS , Drain-to S ource Voltage (V )
F igure 3. C apacitance
2.2
V G S =4.5V
ID=2A
1.8
1.4
1.0
0.6
0.2
0
-50 -25 0 25 50 75 100 125
T j( C )
F igure 4. On-R es is tance Variation with
Te mpe ra ture
3