STC2200 Datasheet, PDF (2/7 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

S TC2200
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain C urrent
Gate-Body Leakage
ON CHARACTERISTICS ^b
Gate Threshold Voltage
S ymbol
BVDSS
IDSS
IGSS
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
On-S tate Drain Current
ID(ON)
Forward Transconductance
g_FS
DYNAMIC CHARACTERISTICS ^c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
Total Gate C harge
Qg
Gate-S ource Charge
Qgs
Gate-Drain C harge
Qgd
C ondition
VGS _=0V, ID =250uA
VDS =16V, VGS =0V
VGS ₌ 10V, VDS= 0V
VDS =VGS , ID = 250uA
VGS =4.5V, ID =2A
VGS = 2.5V, ID= 1A
VDS = 5V, VGS = 4.5V
VDS = 5V, ID=2.3A
VDS =10V, VGS = 0V
f =1.0MHZ
VDD = 10V,
ID = 1A,
VGS = 4.5V,
R GEN = 6 ohm
VDS =10V, ID = 2A,
VGS =4.5V
Min Typ ^C Max Unit
20
V
1 uA
100 nA
0.5 0.8 1.5 V
60 85 ^m-ohm
85 ^{110 m-ohm}
6
A
7
S
210
PF
75
PF
46
PF
13.2
ns
9.1
ns
27.3
ns
15.9
ns
4.2
nC
0.88
nC
1.53
nC
2