STBP60L60A Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).7

STB/P60L60A
90
ID= 32.5A
75
60
45
125 C
30
75 C
15
25 C
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
3000
2500
Ciss
2000
1500
1000
500
Coss
Crss
0
0
5
10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
60
125 C
25 C
10
Ver 3.0
75 C
1
0
0.3
0.6
0.9
1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=30V
8
ID=25A
6
4
2
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
300
100
10
TD(off )
TD(on)
Tr
Tf
VDS=30V,ID=1A
VGS=10V
1
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
100
R ^{DS(ON) Limit}
100us
1ms
D¹_C^0ms
10
1
0.3
0.1
VGS=10V
Single Pulse
TC=25 C
1
10
60
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Oct,13,2011
4
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