STBP60L60A Datasheet, PDF (2/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).7

STB/P60L60A
Ver 3.0
ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
4 _{Symbol Parameter}
Conditions
Min
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage VGS=0V , ID=250uA
60
IDSS
Zero Gate Voltage Drain Current VDS=48V , VGS=0V
IGSS
Gate-Body leakage current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
2
RDS(ON)
g_FS
Drain-Source On-State Resistance VGS=10V , ID=32.5A
Forward Transconductance
VDS=20V , ID=32.5A
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS ^b
tD(ON)
Turn-On DelayTime
tr
Rise Time
tD(OFF)
Turn-Off DelayTime
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD=30V
ID=1A
VGS=10V
RGEN=60 ohm
VDS=30V,ID=25A,VGS=10V
VDS=30V,ID=25A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25^°C,L=0.5mH,VDD = 30V.(See Figure13)
Typ
2.8
15
48
2300
142
108
63
71
162
42
28
5
11
0.75
Max Units
V
1
uA
±100 nA
4
V
19 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.3
V
Oct,13,2011
2
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