STBP60L60A Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).7

Gr
Pr
STB/P60L60A
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 3.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Typ
60V
65A
15 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
Limit
V_DS
Drain-Source Voltage
60
V_GS
Gate-Source Voltage
±20
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
65
54
I_DM
-Pulsed ^b
190
E_AS
Avalanche Energy ^d
156
PD
Maximum Power Dissipation ^a
TC=25°C
TC=70°C
125
87.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
1.2
R _JA
Thermal Resistance, Junction-to-Ambient
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Oct,13,2011
www.samhop.com.tw