STBP4410 Datasheet, PDF (4/10 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).

STB4410
STP4410
30
ID= 37.5A
25
20
125 C
15
75 C
10
5
25 C
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
4800
4000
Ciss
3200
2400
1600
Coss
800
Crss
0
0
5
10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20
10
125 C
75 C
25 C
1
0
0.2 0.4
0.6
0.8
1.0
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS =50V
8
ID=25A
6
4
2
0
0 10 20 30 40 50 60 70 80
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
VDS=50V,ID=1A
1000 ^VGS=10V
Tr
100
TD(on)
TD(off )
Tf
10
1
10
100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
1000
100
10
R ^{DS(ON) Limit}
100us10us
DC^10ms1ms
VGS=10V
1 _{Single Pulse}
TC=25 C
0.3
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Dec,26,2014
4
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