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STBP4410 Datasheet, PDF (1/10 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).
STB4410
Green
Product
STP4410
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Typ
100V
75A
7.0 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
S
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous c
TC=25°C
TC=70°C
75
63
IDM
-Pulsed a c
390
EAS
Avalanche Energy d
576
TC=25°C
PD
Maximum Power Dissipation
TC=70°C
75
52.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
2
R JA
Thermal Resistance, Junction-to-Ambient
62.5
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Dec,26,2014
www.samhop.com.tw