STBP4410 Datasheet, PDF (2/10 Pages) SamHop Microelectronics Corp. – Super high dense cell design for extremely low RDS(ON).

STB4410
STP4410
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25^°C unless otherwise noted⁾
4 _{Symbol Parameter}
Conditions
Min
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current VDS=80V , VGS=0V
IGSS
Gate-Body leakage current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
2
RDS(ON)
g_FS
Drain-Source On-State Resistance VGS=10V , ID=37.5A
Forward Transconductance
VDS=10V , ID=37.5A
DYNAMIC CHARACTERISTICS ^b
CISS
Input Capacitance
COSS
CRSS
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS ^b
tD(ON)
tr
Turn-On DelayTime
Rise Time
tD(OFF)
tf
Turn-Off DelayTime
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=25A,VGS=10V
VDS=50V,ID=25A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
VGS=0V,IS=10A
Notes
a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25^°C,L=0.5mH,VDD = 50V.(See Figure13)
e.Mounted on FR4 Board of 1 inch² , 2oz.
Typ _{Max Units}
V
1
uA
±100 nA
3
4
V
7.0 9.0 m ohm
74
S
3715
pF
515
pF
315
pF
116
ns
147
ns
113
ns
37
ns
58
nC
9.5
nC
26
nC
0.77 1.3
V
Dec,26,2014
2
www.samhop.com.tw