STB8444 Datasheet, PDF (4/8 Pages) SamHop Microelectronics Corp. – N-Channel Enhancement Mode Field Effect Transistor

STB/P8444
12
ID=80 A
10
8
6
125 C
4
75 C
25 C
2
0
0
2
4
6
8
10
VGS, Gate-Sorce Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
9000
7500
Cis s
6000
4500
3000
1500
Cos s
C rss
0
0
5 10 15 20 25 30
VDS, Drain-to Source Voltage(V)
Figure 9. Capacitance
Ver 1.0
20.0
10.0
121525C
25 C
75 C
1.0
0.0 0.2 0.4 0.6 0.8 1.0
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
VDS=20V
ID = 25A
6
4
2
0
0 20 40 60 80 100 120 140 160
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
2200
1000
600
100
Tr
TD(off)
Tf
TD(on)
V DS =20V ,ID=1A
10
V G S =10V
1
6 10
60 100 300 600
Rg, Gate Resistance(Ω)
Figure 11.switching characteristics
1000
100
100us
10
V GS =10V
S ingle P ulse
Tc=25 C
1
0.1
1
10
100
VDS, Drain-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Mar,26,2008
4
www.samhop.com.tw