STB8444 Datasheet, PDF (3/8 Pages) SamHop Microelectronics Corp. – N-Channel Enhancement Mode Field Effect Transistor

STB/P8444
120
96
V G S =10V
72
V G S =6V
48
V G S =5V
24
0
0 0.5
1
1.5
2
2.5
3
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
7
6
5
4
3
V G S =10V
2
1
1
24
48
72
96 120
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
V DS =V G S
1.1
ID=250uA
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.0
20
16
12
25 C
8
Tj=125 C -55 C
4
0
0
1
2
3
4
56
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.0
1.8
V G S =10V
ID= 80 A
1.6
1.4
1.2
1.0
0.0
0 25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.3
ID=250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Mar,26,2008
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