STB8444 Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – N-Channel Enhancement Mode Field Effect Transistor

STB/P8444
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
40V
80A
4.8 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-263 Package.
D
G
S
STB SERIES
TO-263(DD-PAK)
G
D
S
STP SERIES
TO-220
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol
V_DS
V_GS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous ^a
TC=25°C
I_DM
-Pulsed ^b
E_AS
Sigle Pulse Avalanche Energy ^d
P_D
Maximum Power Dissipation
TC=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JC
R _JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Limit
40
±20
80
264
306
62
-55 to 150
1.8
62.5
Units
V
V
A
A
mJ
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Mar,26,2008
www.samhop.com.tw