STB31L01 Datasheet, PDF (4/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STB31L01
180
ID=13A
150
120
125 C
90
75 C
60
25 C
30
0
0
2
4
6
8
10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
1800
1500
Ciss
1200
900
600
300
Coss
Crss
0
0
5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
20
10
125 C
25 C
75 C
Ver 1.1
1
0
0.3
0.6 0.9
1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VDS=50V
8
ID=13A
6
4
2
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
500
100
100
TD(off )
Tr
TD(on)
Tf
10
VDS=50V,ID=1A
VGS=10V
1
1
6 10
60 100
Rg, Gate Resistance(Ω)
Figure 11. switching characteristics
10
1
0.3
0.1
VGS=10V
Single Pulse
TA=25 C
1
10
100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Sep,20,2012
4
www.samhop.com.tw